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IRFH5250DTRPBF
Power MOSFET, N Channel, 25 V, 100 A, 0.0014 ohm, QFN, Surface Mount
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TootjaINFINEON
Tootja toote nrIRFH5250DTRPBF
Tellimiskood2781124
TootevalikHEXFET Series
Teise nimegaSP001577928
Tehniliste andmete leht
3 785 Laos
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Tarneaeg 1–2 tööpäeva
Tellige enne kella 17:00 tavaline saadetis
Saadaval, kuni laos jätkub
| Kogus | |
|---|---|
| 1+ | 0,770 € |
| 10+ | 0,749 € |
| 100+ | 0,729 € |
| 500+ | 0,708 € |
| 1000+ | 0,694 € |
Hind:Each (Supplied on Cut Tape)
Minimaalne: 1
Mitmekordne: 1
0,77 € (KM-ta)
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Tooteteave
TootjaINFINEON
Tootja toote nrIRFH5250DTRPBF
Tellimiskood2781124
TootevalikHEXFET Series
Teise nimegaSP001577928
Tehniliste andmete leht
Channel TypeN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id100A
Drain Source On State Resistance0.0014ohm
Transistor Case StyleQFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.8V
Power Dissipation156W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeHEXFET Series
Qualification-
SVHCNo SVHC (27-Jun-2018)
Alternatiivid tootele IRFH5250DTRPBF
Leiti 3 toodet
Toote ülevaade
IRFH5250DTRPBF is a HEXFET® power MOSFET. Applications include synchronous MOSFET for high frequency buck converters.
- Low RDSon (<lt/>1.4mohm), lower conduction losses
- Schottky intrinsic diode with low forward voltage, lower switching losses
- Low thermal resistance to PCB (<lt/>0.8°C/W), enable better thermal dissipation
- 100%Rg tested, increased reliability
- Low profile (<lt/>0.9mm), increased power density
- Industry-standard pinout, multi-vendor compatibility
- Compatible with existing surface mount techniques, easier manufacturing
- Environmentally friendlier, increased reliability
- 25V minimum drain-to-source breakdown voltage (VGS = 0V, ID = 1.0mA, TJ = 25°C)
- BF PQFN package, operating junction and storage temperature range from -55 to + 150°C
Hoiatused
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
Channel Type
N Channel
Continuous Drain Current Id
100A
Transistor Case Style
QFN
Rds(on) Test Voltage
10V
Power Dissipation
156W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
25V
Drain Source On State Resistance
0.0014ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.8V
No. of Pins
8Pins
Product Range
HEXFET Series
SVHC
No SVHC (27-Jun-2018)
Tehnilised dokumendid (1)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (27-Jun-2018)
Laadige alla vastavussertifikaat
Toote vastavussertifikaat
Kaal (kg):.000025