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IRF7907TRPBF
Dual MOSFET, N Channel, 30 V, 30 V, 11 A, 11 A, 9800 µohm
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TootjaINFINEON
Tootja toote nrIRF7907TRPBF
Tellimiskood2725920RL
TootevalikHEXFET Series
Teise nimegaSP001566462
Tehniliste andmete leht
4 113 Laos
4 000 Varusid saab nüüd reserveerida
.
.
Tasuta standardtarne
tellimustele alates 0,00 €
Täpsed tarneajad arvutatakse kassas
| Kogus | |
|---|---|
| 50+ | 0,873 € |
| 250+ | 0,597 € |
| 1000+ | 0,426 € |
| 2000+ | 0,406 € |
Hind:Each (Supplied on Cut Tape)
Minimaalne: 100
Mitmekordne: 5
92,30 € (KM-ta)
Sellele tootele lisatakse ümberkerimise tasu 5,00 €
tootemärkus
Lisatud teie tellimuse kinnitusele, arvele ja väljastusteatele ainult sellel tellimusel.
Tooteteave
TootjaINFINEON
Tootja toote nrIRF7907TRPBF
Tellimiskood2725920RL
TootevalikHEXFET Series
Teise nimegaSP001566462
Tehniliste andmete leht
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel11A
Continuous Drain Current Id P Channel11A
Drain Source On State Resistance N Channel9800µohm
Drain Source On State Resistance P Channel9800µohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product RangeHEXFET Series
Qualification-
SVHCNo SVHC (21-Jan-2025)
Toote ülevaade
Dual N-channel HEXFET® power MOSFET for POL converters in notebook computers, servers, graphics cards, game consoles and set-top box.
- Very low RDS(on) at 4.5V VGS
- Low gate charge
- Fully characterized avalanche voltage and current
- Improved body diode reverse recovery
- 100% tested for RG
Hoiatused
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
Channel Type
N Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
11A
Drain Source On State Resistance P Channel
9800µohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
HEXFET Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
11A
Drain Source On State Resistance N Channel
9800µohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Tehnilised dokumendid (2)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (21-Jan-2025)
Laadige alla vastavussertifikaat
Toote vastavussertifikaat
Kaal (kg):.00019
Toote jälitatavus