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Alternatiivid tootele IPW65R110CFDFKSA1
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The IPW65R110CFD is a 650V CoolMOS™ CFD2 N-channel Power MOSFET with ultra-fast body diode. The CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. This CoolMOS™ CFD2 combines the experience of the leading SJ MOSFET supplier with high class innovation. The device provides all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode. This combination of extremely low switching and conduction losses together with highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler.
- Integrated fast body diode
- Very high commutation ruggedness
- Extremely low losses due to very low figure of merit (RDS (ON) x Qg and EOSS)
- Easy to use/drive
- Halogen-free
- Limited voltage overshoot during hard commutation
- Significant Qg reduction
- Self limiting di/dt and dV/dt
- Low Qoss
- Reduced turn-ON and turn-OFF delay times
- Low switching losses
- Outstanding CoolMOS™ quality
Rakendused
Industrial, Power Management, Communications & Networking, Alternative Energy, LED Lighting, Automotive
Hoiatused
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
N Channel
31.2A
TO-247
10V
277.8W
150°C
-
700V
0.099ohm
Through Hole
4V
3Pins
-
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Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
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