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IPT059N15N3ATMA1
Power MOSFET, N Channel, 150 V, 155 A, 5000 µohm, HSOF, Surface Mount
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TootjaINFINEON
Tootja toote nrIPT059N15N3ATMA1
Tellimiskood2480870
TootevalikOptiMOS 3 Series
Teise nimegaIPT059N15N3, SP001100162
Tehniliste andmete leht
5 809 Laos
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Ekspresstarne 1–2 tööpäeva jooksul
Tellige enne kella 17:00
Tasuta standardtarne
tellimustele alates 0,00 €
Täpsed tarneajad arvutatakse kassas
| Kogus | |
|---|---|
| 1+ | 4,120 € |
| 10+ | 3,340 € |
| 100+ | 2,650 € |
| 500+ | 2,360 € |
| 1000+ | 2,030 € |
Hind:Each (Supplied on Cut Tape)
Minimaalne: 1
Mitmekordne: 1
4,12 € (KM-ta)
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Tooteteave
TootjaINFINEON
Tootja toote nrIPT059N15N3ATMA1
Tellimiskood2480870
TootevalikOptiMOS 3 Series
Teise nimegaIPT059N15N3, SP001100162
Tehniliste andmete leht
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id155A
Drain Source On State Resistance5000µohm
Transistor Case StyleHSOF
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation375W
No. of Pins8Pins
Operating Temperature Max175°C
Product RangeOptiMOS 3 Series
Qualification-
SVHCNo SVHC (21-Jan-2025)
Toote ülevaade
IPT059N15N3ATMA1 is an OptiMOS™3 N-channel power MOSFET. Potential applications are forklift, light electric vehicles (LEV) e.g. e-scooter, e-bikes or µ-car, Point-of-load (POL), telecom, efuse.
- Normal level, excellent gate charge xRDS(on) product (FOM)
- Very low on-resistance RDS (on), 175°C operating temperature, PG-HSOF-8 package
- Qualified according to JEDEC for target application
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free according to IEC61249-2-21
- Less paralleling and cooling required, highest system reliability
- System cost reduction, enabling very compact design
- Drain-source on-state resistance is 5.9mohm at VGS=10V, ID=150A
- Diode continuous forward current is 155A at TC=25°C
- Drain-source breakdown voltage is 150V at VGS=0V, ID=1mA
Hoiatused
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
Channel Type
N Channel
Continuous Drain Current Id
155A
Transistor Case Style
HSOF
Rds(on) Test Voltage
10V
Power Dissipation
375W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
150V
Drain Source On State Resistance
5000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
OptiMOS 3 Series
MSL
MSL 1 - Unlimited
Tehnilised dokumendid (1)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (21-Jan-2025)
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Toote vastavussertifikaat
Kaal (kg):.0007