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IPP65R095C7XKSA1
Power MOSFET, N Channel, 650 V, 24 A, 0.095 ohm, TO-220, Through Hole
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TootjaINFINEON
Tootja toote nrIPP65R095C7XKSA1
Tellimiskood2726070
TootevalikCoolMOS C7
Teise nimegaIPP65R095C7, SP001080122
Tehniliste andmete leht
1 753 Laos
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Ekspresstarne 1–2 tööpäeva jooksul
Tellige enne kella 17:00
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tellimustele alates 0,00 €
Täpsed tarneajad arvutatakse kassas
| Kogus | |
|---|---|
| 1+ | 4,850 € |
| 10+ | 3,860 € |
| 100+ | 2,570 € |
| 500+ | 2,130 € |
| 1000+ | 2,050 € |
Hind:Each
Minimaalne: 1
Mitmekordne: 1
4,85 € (KM-ta)
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Tooteteave
TootjaINFINEON
Tootja toote nrIPP65R095C7XKSA1
Tellimiskood2726070
TootevalikCoolMOS C7
Teise nimegaIPP65R095C7, SP001080122
Tehniliste andmete leht
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id24A
Drain Source On State Resistance0.095ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation128W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeCoolMOS C7
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Toote ülevaade
650V CoolMOS™ C7 power transistor, a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle and suitable for use in PFC stages and PWM stages for e.g. computing, server, telecom, UPS and solar.
- Increased MOSFET dv/dt ruggedness
- Better efficiency due to best in class FOM RDS(on) *Eoss and RDS(on)*Qg
- Best-in-class RDS(on)/package
- Easy to use/drive
- Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)
- Enabling higher system efficiency
- Enabling higher frequency/increased power density solutions
- System cost/size savings due to reduced cooling requirements
- Higher system reliability due to lower operating temperatures
Hoiatused
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
Channel Type
N Channel
Continuous Drain Current Id
24A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
128W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.095ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.5V
No. of Pins
3Pins
Product Range
CoolMOS C7
MSL
-
Tehnilised dokumendid (2)
Alternatiivid tootele IPP65R095C7XKSA1
Leiti 4 toodet
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Leiti 3 toodet
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (21-Jan-2025)
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Toote vastavussertifikaat
Kaal (kg):.002
Toote jälitatavus