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IPP041N12N3GXKSA1
Power MOSFET, N Channel, 120 V, 120 A, 4100 µohm, TO-220, Through Hole
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TootjaINFINEON
Tootja toote nrIPP041N12N3GXKSA1
Tellimiskood2212848
Teise nimegaIPP041N12N3 G, SP000652746
Tehniliste andmete leht
1 700 Laos
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Ekspresstarne 1–2 tööpäeva jooksul
Tellige enne kella 17:00
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tellimustele alates 0,00 €
Täpsed tarneajad arvutatakse kassas
| Kogus | |
|---|---|
| 1+ | 4,420 € |
| 10+ | 2,710 € |
| 100+ | 2,560 € |
| 500+ | 2,290 € |
| 1000+ | 1,860 € |
Hind:Each
Minimaalne: 1
Mitmekordne: 1
4,42 € (KM-ta)
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Tooteteave
TootjaINFINEON
Tootja toote nrIPP041N12N3GXKSA1
Tellimiskood2212848
Teise nimegaIPP041N12N3 G, SP000652746
Tehniliste andmete leht
Channel TypeN Channel
Drain Source Voltage Vds120V
Continuous Drain Current Id120A
Drain Source On State Resistance4100µohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Toote ülevaade
The IPP041N12N3 G is an OptiMOS™ N-channel Power MOSFET offers at the same time the lowest ON-state resistances of the industry and the fastest switching behaviour, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS™ technology gives new possibilities for optimized solutions.
- Excellent gate charge x RDS (ON) product (FOM)
- Very low ON-resistance R DS(on)
- Excellent gate charge x RDS (ON) product (FOM)
- MSL1 rated 2
- Environmentally friendly
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
- N-channel, normal level
- Qualified according to JEDEC for target applications
- Halogen-free, Green device
Rakendused
Power Management, Motor Drive & Control, Computers & Computer Peripherals, Portable Devices, LED Lighting
Hoiatused
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
Channel Type
N Channel
Continuous Drain Current Id
120A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
300W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
120V
Drain Source On State Resistance
4100µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
-
Tehnilised dokumendid (2)
Seotud tooted
Leiti 3 toodet
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (21-Jan-2025)
Laadige alla vastavussertifikaat
Toote vastavussertifikaat
Kaal (kg):.003184
Toote jälitatavus