Prindi leht
IPL60R125C7AUMA1
Power MOSFET, N Channel, 600 V, 17 A, 0.125 ohm, VSON, Surface Mount
Pilt on illustreeriv. Lugege toote kirjeldust.
TootjaINFINEON
Tootja toote nrIPL60R125C7AUMA1
Tellimiskood2983364
TootevalikCoolMOS C7
Teise nimegaIPL60R125C7, SP001385066
Tehniliste andmete leht
2 714 Laos
Vajate rohkem?
Ekspresstarne 1–2 tööpäeva jooksul
Tellige enne kella 17:00
Tasuta standardtarne
tellimustele alates 0,00 €
Täpsed tarneajad arvutatakse kassas
| Kogus | |
|---|---|
| 1+ | 3,370 € |
| 10+ | 2,660 € |
| 100+ | 2,040 € |
| 500+ | 1,740 € |
| 1000+ | 1,590 € |
Hind:Each (Supplied on Cut Tape)
Minimaalne: 1
Mitmekordne: 1
3,37 € (KM-ta)
Lisage tootenr/ /tootemärkus
Lisatud teie tellimuse kinnitusele, arvele ja väljastusteatele ainult sellel tellimusel.
See arv lisatakse tellimuse kinnitusele, arvele, väljastusteatele, veebipõhisele kinnitusmeilile ja tootesildile.
Tooteteave
TootjaINFINEON
Tootja toote nrIPL60R125C7AUMA1
Tellimiskood2983364
TootevalikCoolMOS C7
Teise nimegaIPL60R125C7, SP001385066
Tehniliste andmete leht
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id17A
Drain Source On State Resistance0.125ohm
Transistor Case StyleVSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation103W
No. of Pins4Pins
Operating Temperature Max150°C
Product RangeCoolMOS C7
Qualification-
SVHCNo SVHC (21-Jan-2025)
Toote ülevaade
IPL60R125C7AUMA1 is a 600V CoolMOS™ C7 power transistor. It is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. It combines the experience of the leading SJ MOSFET supplier with high class innovation. Potential applications includes PFC stages and PWM stages (TTF,LLC) for high power/performance SMPS example computing, server, telecom, UPS and solar.
- Suitable for hard and soft switching (PFC and high performance LLC)
- Increased MOSFET dv/dt ruggedness to 120V/ns
- Qualified for industrial grade applications according to JEDEC(J-STD20 and JESD22)
- 4pin kelvin source concept
- Increased economies of scale by use in PFC and PWM topologies in the application
- Higher dv/dt limit enables faster switching leading to higher efficiency
- Enabling higher system efficiency by lower switching glosses
- Optimized PCB assembly and layout solutions
- Suitable for applications such as server, telecom and solar
- PG-VSON-4 package, operating junction temperature range from -40 to 150°C
Tehnilised andmed
Channel Type
N Channel
Continuous Drain Current Id
17A
Transistor Case Style
VSON
Rds(on) Test Voltage
10V
Power Dissipation
103W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.125ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
4Pins
Product Range
CoolMOS C7
MSL
MSL 1 - Unlimited
Tehnilised dokumendid (1)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (21-Jan-2025)
Laadige alla vastavussertifikaat
Toote vastavussertifikaat
Kaal (kg):.001
Toote jälitatavus