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IPD068N10N3GATMA1
Power MOSFET, N Channel, 100 V, 90 A, 0.0068 ohm, TO-252 (DPAK), Surface Mount
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TootjaINFINEON
Tootja toote nrIPD068N10N3GATMA1
Tellimiskood2480817
Teise nimegaIPD068N10N3 G, SP001127816
Tehniliste andmete leht
701 Laos
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Tarneaeg 1–2 tööpäeva
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| Kogus | |
|---|---|
| 5+ | 1,060 € |
| 50+ | 0,928 € |
| 100+ | 0,855 € |
| 500+ | 0,835 € |
| 1000+ | 0,831 € |
Hind:Each (Supplied on Cut Tape)
Minimaalne: 5
Mitmekordne: 5
5,30 € (KM-ta)
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Tooteteave
TootjaINFINEON
Tootja toote nrIPD068N10N3GATMA1
Tellimiskood2480817
Teise nimegaIPD068N10N3 G, SP001127816
Tehniliste andmete leht
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id90A
Drain Source On State Resistance0.0068ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.7V
Power Dissipation150W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Toote ülevaade
The IPD068N10N3 G is an OptiMOS™ N-channel Power MOSFET offers superior solutions for high efficiency and high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS (ON) and FOM (figure of merit).
- Excellent switching performance
- World's lowest RDS (ON)
- Very low Qg and Qgd
- Excellent gate charge x RDS (ON) product (FOM)
- Halogen-free, Green device
- Environmentally friendly
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
- Normal level
- Qualified according to JEDEC for target application
- Ideal for high-frequency switching and synchronous rectification
Rakendused
Power Management, Motor Drive & Control, Audio, Communications & Networking, Industrial
Tehnilised andmed
Channel Type
N Channel
Continuous Drain Current Id
90A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
150W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0068ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.7V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Tehnilised dokumendid (1)
Alternatiivid tootele IPD068N10N3GATMA1
Leiti 1 toodet
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (21-Jan-2025)
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Toote vastavussertifikaat
Kaal (kg):.00046
Toote jälitatavus