Prindi leht
IPD025N06NATMA1
Power MOSFET, N Channel, 60 V, 90 A, 0.0025 ohm, TO-252 (DPAK), Surface Mount
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TootjaINFINEON
Tootja toote nrIPD025N06NATMA1
Tellimiskood2480813
Teise nimegaIPD025N06N, SP000988276
Tehniliste andmete leht
10 684 Laos
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Tarneaeg 1–2 tööpäeva
Tellige enne kella 17:00 tavaline saadetis
| Kogus | |
|---|---|
| 5+ | 2,360 € |
| 50+ | 1,690 € |
| 100+ | 1,330 € |
| 500+ | 1,050 € |
| 1000+ | 0,982 € |
Hind:Each (Supplied on Cut Tape)
Minimaalne: 5
Mitmekordne: 5
11,80 € (KM-ta)
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Tooteteave
TootjaINFINEON
Tootja toote nrIPD025N06NATMA1
Tellimiskood2480813
Teise nimegaIPD025N06N, SP000988276
Tehniliste andmete leht
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id90A
Drain Source On State Resistance0.0025ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.8V
Power Dissipation167W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Toote ülevaade
The IPD025N06N is an OptiMOS™ N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS). In addition these devices are a perfect choice for a broad range of industrial applications including solar micro inverter and fast switching DC-to-DC converter.
- Highest system efficiency
- Less paralleling required
- Increased power density
- Very low voltage overshoot
- MSL1 rated
- 40% lower RDS (ON) than alternative devices
- 40% Improvement of FOM over similar devices
- 100% Avalanche tested
- Superior thermal resistance
- Qualified according to JEDEC for target applications
- Halogen-free, Green device
- Normal level
Rakendused
Power Management, Motor Drive & Control, Industrial, Communications & Networking, Computers & Computer Peripherals, Consumer Electronics, Portable Devices
Hoiatused
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
Channel Type
N Channel
Continuous Drain Current Id
90A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
167W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.0025ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.8V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Tehnilised dokumendid (2)
Alternatiivid tootele IPD025N06NATMA1
Leiti 5 toodet
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (21-Jan-2025)
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Toote vastavussertifikaat
Kaal (kg):.00143