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IPB60R040C7ATMA1
Power MOSFET, N Channel, 600 V, 50 A, 0.04 ohm, TO-263 (D2PAK), Surface Mount
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TootjaINFINEON
Tootja toote nrIPB60R040C7ATMA1
Tellimiskood2986461
TootevalikCoolMOS C7
Teise nimegaIPB60R040C7, SP001277610
Tehniliste andmete leht
2 765 Laos
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Ekspresstarne 1–2 tööpäeva jooksul
Tellige enne kella 17:00
Tasuta standardtarne
tellimustele alates 0,00 €
Täpsed tarneajad arvutatakse kassas
| Kogus | |
|---|---|
| 1+ | 8,640 € |
| 5+ | 7,410 € |
| 10+ | 6,170 € |
| 50+ | 5,680 € |
| 100+ | 4,580 € |
| 250+ | 4,490 € |
Hind:Each (Supplied on Cut Tape)
Minimaalne: 1
Mitmekordne: 1
8,64 € (KM-ta)
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Tooteteave
TootjaINFINEON
Tootja toote nrIPB60R040C7ATMA1
Tellimiskood2986461
TootevalikCoolMOS C7
Teise nimegaIPB60R040C7, SP001277610
Tehniliste andmete leht
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id50A
Drain Source On State Resistance0.04ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation227W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeCoolMOS C7
Qualification-
SVHCNo SVHC (21-Jan-2025)
Toote ülevaade
600V CoolMOS™ C7 power transistor, a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle suitable for use in PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS e.g. computing, server, telecom, UPS and solar.
- Suitable for hard and soft switching (PFC and high performance LLC)
- Increased MOSFET dv/dt ruggedness to 120V/ns
- Best in class RDS(on)/package
- Qualified for industrial grade applications according to JEDEC(J-STD20 and JESD22)
- Increased economies of scale by use in PFC and PWM topologies in the application
- Higher dv/dt limit enables faster switching leading to higher efficiency
- Enabling higher system efficiency by lower switching losses
- Increased power density solutions due to smaller packages
- Higher switching frequencies possible without loss in efficiency due to low Eoss and Qg
Hoiatused
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
Channel Type
N Channel
Continuous Drain Current Id
50A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
227W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.04ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.5V
No. of Pins
3Pins
Product Range
CoolMOS C7
MSL
MSL 1 - Unlimited
Tehnilised dokumendid (1)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (21-Jan-2025)
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Toote vastavussertifikaat
Kaal (kg):.00181
Toote jälitatavus