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IPB020NE7N3GATMA1
Power MOSFET, N Channel, 75 V, 120 A, 0.002 ohm, TO-263 (D2PAK), Surface Mount
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TootjaINFINEON
Tootja toote nrIPB020NE7N3GATMA1
Tellimiskood2443378
TootevalikOptiMOS 3 Series
Teise nimegaIPB020NE7N3 G , SP000676950
Tehniliste andmete leht
129 Laos
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| Kogus | |
|---|---|
| 1+ | 5,020 € |
| 10+ | 3,550 € |
| 100+ | 2,680 € |
| 500+ | 2,610 € |
| 1000+ | 2,360 € |
Hind:Each (Supplied on Cut Tape)
Minimaalne: 1
Mitmekordne: 1
5,02 € (KM-ta)
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Tooteteave
TootjaINFINEON
Tootja toote nrIPB020NE7N3GATMA1
Tellimiskood2443378
TootevalikOptiMOS 3 Series
Teise nimegaIPB020NE7N3 G , SP000676950
Tehniliste andmete leht
Channel TypeN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id120A
Drain Source On State Resistance0.002ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.8V
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS 3 Series
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Toote ülevaade
The IPB020NE7N3 G is a N-channel Power MOSFET with OptiMOS™ technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest ON-state resistances and superior switching performance.
- Best switching performance
- World's lowest RDS (ON)
- Very low Qg and Qgd
- Excellent gate charge x RDS (ON) product (FOM)
- MSL1 rated
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
- Ideal for high frequency switching and DC-to-DC converters
- Normal level
- 100% avalanche tested
- Qualified according to JEDEC for target applications
- Halogen-free, Green device
Rakendused
Power Management, Motor Drive & Control, Audio, Communications & Networking, Automotive
Tehnilised andmed
Channel Type
N Channel
Continuous Drain Current Id
120A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
300W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
75V
Drain Source On State Resistance
0.002ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.8V
No. of Pins
3Pins
Product Range
OptiMOS 3 Series
MSL
MSL 1 - Unlimited
Tehnilised dokumendid (3)
Alternatiivid tootele IPB020NE7N3GATMA1
Leiti 2 toodet
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (21-Jan-2025)
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Toote vastavussertifikaat
Kaal (kg):.00181
Toote jälitatavus