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IMBG120R140M1HXTMA1
Silicon Carbide MOSFET, Single, N Channel, 18 A, 1.2 kV, 0.189 ohm, TO-263 (D2PAK)
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TootjaINFINEON
Tootja toote nrIMBG120R140M1HXTMA1
Tellimiskood3582465RL
TootevalikCoolSiC Trench Series
Teise nimegaIMBG120R140M1H, SP004463792
Tehniliste andmete leht
1 002 Laos
1 000 Varusid saab nüüd reserveerida
Ekspresstarne 1–2 tööpäeva jooksul
Tellige enne kella 17:00
Tasuta standardtarne
tellimustele alates 0,00 €
Täpsed tarneajad arvutatakse kassas
| Kogus | |
|---|---|
| 100+ | 3,390 € |
| 500+ | 3,370 € |
| 1000+ | 3,120 € |
Hind:Each (Supplied on Cut Tape)
Minimaalne: 100
Mitmekordne: 1
344,00 € (KM-ta)
Sellele tootele lisatakse ümberkerimise tasu 5,00 €
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Tooteteave
TootjaINFINEON
Tootja toote nrIMBG120R140M1HXTMA1
Tellimiskood3582465RL
TootevalikCoolSiC Trench Series
Teise nimegaIMBG120R140M1H, SP004463792
Tehniliste andmete leht
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id18A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.189ohm
On Resistance Rds(on)0.14ohm
Transistor Case StyleTO-263 (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5.7V
Power Dissipation107W
Power Dissipation Pd107W
Operating Temperature Max175°C
Product RangeCoolSiC Trench Series
SVHCNo SVHC (21-Jan-2025)
Toote ülevaade
IMBG120R140M1HXTMA1 is a CoolSiC™ 1200V SiC Trench MOSFET with .XT interconnection technology. Typical applications include drives, infrastructure – charger, energy generation solar string inverter and solar optimizer and industrial power supplies-industrial UPS.
- Very low switching losses
- Short circuit withstand time 3µs
- Fully controllable dV/dt
- Benchmark gate threshold voltage, VGS(th) = 4.5V
- Robust against parasitic turn on, 0V turn-off gate voltage can be applied
- Robust body diode for hard commutation
- Package creepage and clearance distance <gt/> 6.1mm
- Sense pin for optimized switching performance
- Efficiency improvement, enabling higher frequency and increased power density
- Cooling effort reduction and reduction of system complexity and cost
Hoiatused
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
MOSFET Module Configuration
Single
Transistor Polarity
N Channel
Drain Source Voltage Vds
1.2kV
On Resistance Rds(on)
0.14ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
5.7V
Power Dissipation Pd
107W
Product Range
CoolSiC Trench Series
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Continuous Drain Current Id
18A
Drain Source On State Resistance
0.189ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
18V
Power Dissipation
107W
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Tehnilised dokumendid (1)
Seotud tooted
Leiti 4 toodet
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (21-Jan-2025)
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Toote vastavussertifikaat
Kaal (kg):.001588
Toote jälitatavus