Prindi leht
IKW30N60H3FKSA1
IGBT, 30 A, 2.4 V, 187 W, 600 V, TO-247, 3 Pins
Pilt on illustreeriv. Lugege toote kirjeldust.
TootjaINFINEON
Tootja toote nrIKW30N60H3FKSA1
Tellimiskood1832342
Teise nimegaIKW30N60H3, SP000703042
Tehniliste andmete leht
289 Laos
240 Varusid saab nüüd reserveerida
Tarneaeg 1–2 tööpäeva
Tellige enne kella 17:00 tavaline saadetis
| Kogus | |
|---|---|
| 1+ | 3,260 € |
| 10+ | 2,380 € |
| 100+ | 1,800 € |
| 500+ | 1,390 € |
| 1000+ | 1,360 € |
Hind:Each
Minimaalne: 1
Mitmekordne: 1
3,26 € (KM-ta)
Lisage tootenr/ /tootemärkus
Lisatud teie tellimuse kinnitusele, arvele ja väljastusteatele ainult sellel tellimusel.
See arv lisatakse tellimuse kinnitusele, arvele, väljastusteatele, veebipõhisele kinnitusmeilile ja tootesildile.
Tooteteave
TootjaINFINEON
Tootja toote nrIKW30N60H3FKSA1
Tellimiskood1832342
Teise nimegaIKW30N60H3, SP000703042
Tehniliste andmete leht
Continuous Collector Current30A
Collector Emitter Saturation Voltage2.4V
Power Dissipation187W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-247
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product Range-
MSL-
SVHCNo SVHC (21-Jan-2025)
Toote ülevaade
The IKW30N60H3 is a 600V Discrete IGBT with very soft, fast recovery anti-parallel diode designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz. The key feature of this family is a MOSFET-like turn-off switching behaviour and thus leading to low turn off losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.
- Low switching losses for high efficiency
- Fast switching behaviour with low EMI emissions
- Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
- Short circuit capability
- Excellent performance
- Low switching and conduction losses
Rakendused
Power Management, Alternative Energy
Hoiatused
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
Continuous Collector Current
30A
Power Dissipation
187W
Transistor Case Style
TO-247
Operating Temperature Max
175°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Collector Emitter Saturation Voltage
2.4V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
MSL
-
Tehnilised dokumendid (3)
Alternatiivid tootele IKW30N60H3FKSA1
Leiti 6 toodet
Seotud tooted
Leiti 4 toodet
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Philippines
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Philippines
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (21-Jan-2025)
Laadige alla vastavussertifikaat
Toote vastavussertifikaat
Kaal (kg):.00542
Toote jälitatavus