IGT60R070D1ATMA1

Infineon launches a GaN enhancement mode high electron mobility transistor (e‑mode HEMT) portfolio with industry‑leading field performance, enabling rugged and reliable systems at an attractive overall system cost. CoolGaN™ transistors are built with the most reliable GaN technology and are tailor‑made to deliver the market’s highest efficiency and density levels in switched mode power supplies. The application‑based qualification approach extends beyond that of other GaN products in the market.

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Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.