Prindi leht
IGP50N60TXKSA1
IGBT, 50 A, 2 V, 333 W, 600 V, TO-220, 3 Pins
Pilt on illustreeriv. Lugege toote kirjeldust.
TootjaINFINEON
Tootja toote nrIGP50N60TXKSA1
Tellimiskood1832355
Teise nimegaIGP50N60T, SP000683046
Tehniliste andmete leht
5 Laos
500 Varusid saab nüüd reserveerida
Tarneaeg 1–2 tööpäeva
Tellige enne kella 17:00 tavaline saadetis
| Kogus | |
|---|---|
| 1+ | 3,860 € |
| 10+ | 2,970 € |
| 100+ | 2,160 € |
| 500+ | 2,130 € |
| 1000+ | 1,650 € |
Hind:Each
Minimaalne: 1
Mitmekordne: 1
3,86 € (KM-ta)
Lisage tootenr/ /tootemärkus
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Tooteteave
TootjaINFINEON
Tootja toote nrIGP50N60TXKSA1
Tellimiskood1832355
Teise nimegaIGP50N60T, SP000683046
Tehniliste andmete leht
Continuous Collector Current50A
Collector Emitter Saturation Voltage2V
Power Dissipation333W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-220
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product Range-
MSL-
SVHCNo SVHC (21-Jan-2025)
Toote ülevaade
The IGP50N60T is a 600V Discrete IGBT Single Transistor without anti-parallel diode. TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
- Lowest Vce (sat) drop for lower conduction losses
- Low switching losses
- Easy parallel switching capability due to positive temperature coefficient in Vce (sat)
- Very soft, fast recovery anti-parallel emitter controlled diode
- High ruggedness, temperature stable behavior
- Low EMI emissions
- Low gate charge
- Very tight parameter distribution
- Comprehensive portfolio in 600V and 1200V for flexibility of design
- High device reliability
- ±20V Gate to emitter voltage (VGE)
- 0.45K/W IGBT thermal resistance, junction to case
- 40K/W IGBT thermal resistance, junction - ambient
Rakendused
Power Management, Alternative Energy, Consumer Electronics, HVAC, Industrial
Tehnilised andmed
Continuous Collector Current
50A
Power Dissipation
333W
Transistor Case Style
TO-220
Operating Temperature Max
175°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Collector Emitter Saturation Voltage
2V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
MSL
-
Tehnilised dokumendid (3)
Seotud tooted
Leiti 3 toodet
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Philippines
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Philippines
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (21-Jan-2025)
Laadige alla vastavussertifikaat
Toote vastavussertifikaat
Kaal (kg):.00195