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IDM10G120C5XTMA1
Silicon Carbide Schottky Diode, thinQ 5G 1200V, Single, 1.2 kV, 38 A, 41 nC, TO-252 (DPAK)
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TootjaINFINEON
Tootja toote nrIDM10G120C5XTMA1
Tellimiskood2780807
TootevalikthinQ 5G 1200V
Teise nimegaIDM10G120C5, SP001127116
Tehniliste andmete leht
3 186 Laos
Vajate rohkem?
Tarneaeg 1–2 tööpäeva
Tellige enne kella 17:00 tavaline saadetis
| Kogus | |
|---|---|
| 1+ | 4,620 € |
| 10+ | 3,070 € |
| 100+ | 2,190 € |
| 500+ | 1,810 € |
| 1000+ | 1,730 € |
Hind:Each (Supplied on Cut Tape)
Minimaalne: 1
Mitmekordne: 1
4,62 € (KM-ta)
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Tooteteave
TootjaINFINEON
Tootja toote nrIDM10G120C5XTMA1
Tellimiskood2780807
TootevalikthinQ 5G 1200V
Teise nimegaIDM10G120C5, SP001127116
Tehniliste andmete leht
Product RangethinQ 5G 1200V
Diode ConfigurationSingle
Repetitive Peak Reverse Voltage1.2kV
Average Forward Current38A
Total Capacitive Charge41nC
Diode Case StyleTO-252 (DPAK)
No. of Pins2 Pin
Operating Temperature Max175°C
Diode MountingSurface Mount
Qualification-
SVHCNo SVHC (21-Jan-2025)
Toote ülevaade
5th Generation thinQ!™ 1200V SiC Schottky diode suitable for use in solar inverters, uninterruptable power supplies, motor drives and power factor correction. Benefits of using Schottky diode are System efficiency improvement over Si diodes, system cost / size savings due to reduced cooling requirements, enabling higher frequency / increased power density solutions, higher system reliability due to lower operating temperatures and reduced EMI.
- Revolutionary semiconductor material - silicon carbide
- No reverse recovery current / no forward recovery
- Temperature independent switching behaviour
- Low forward voltage even at high operating temperature
- Tight forward voltage distribution
- Excellent thermal performance
- Extended surge current capability
- Specified dv/dt ruggedness
- Qualified according to JEDEC for target applications
Hoiatused
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
Product Range
thinQ 5G 1200V
Repetitive Peak Reverse Voltage
1.2kV
Total Capacitive Charge
41nC
No. of Pins
2 Pin
Diode Mounting
Surface Mount
SVHC
No SVHC (21-Jan-2025)
Diode Configuration
Single
Average Forward Current
38A
Diode Case Style
TO-252 (DPAK)
Operating Temperature Max
175°C
Qualification
-
Tehnilised dokumendid (2)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (21-Jan-2025)
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Toote vastavussertifikaat
Kaal (kg):.000426
Toote jälitatavus