Prindi leht
Tooteteave
TootjaINFINEON
Tootja toote nrFF200R12KT3HOSA1
Tellimiskood2726124
Tootevalik62mm C
Teise nimegaFF200R12KT3, SP000100789
Tehniliste andmete leht
IGBT ConfigurationDual
Transistor PolarityN Channel
DC Collector Current295A
Continuous Collector Current295A
Collector Emitter Saturation Voltage1.7V
Collector Emitter Saturation Voltage Vce(on)1.7V
Power Dissipation Pd1.05kW
Power Dissipation1.05kW
Junction Temperature Tj Max125°C
Operating Temperature Max125°C
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleModule
IGBT TerminationStud
Collector Emitter Voltage Max1.2kV
IGBT TechnologyIGBT 3 [Trench/Field Stop]
Transistor MountingPanel
Product Range62mm C
SVHCNo SVHC (08-Jul-2021)
Toote ülevaade
Hoiatused
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
IGBT Configuration
Dual
DC Collector Current
295A
Collector Emitter Saturation Voltage
1.7V
Power Dissipation Pd
1.05kW
Junction Temperature Tj Max
125°C
Collector Emitter Voltage V(br)ceo
1.2kV
IGBT Termination
Stud
IGBT Technology
IGBT 3 [Trench/Field Stop]
Product Range
62mm C
Transistor Polarity
N Channel
Continuous Collector Current
295A
Collector Emitter Saturation Voltage Vce(on)
1.7V
Power Dissipation
1.05kW
Operating Temperature Max
125°C
Transistor Case Style
Module
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
No SVHC (08-Jul-2021)
Tehnilised dokumendid (2)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Hungary
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Hungary
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (08-Jul-2021)
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Toote vastavussertifikaat
Kaal (kg):.000337
Toote jälitatavus