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BSC077N12NS3GATMA1
Power MOSFET, N Channel, 120 V, 98 A, 0.0066 ohm, TDSON, Surface Mount
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TootjaINFINEON
Tootja toote nrBSC077N12NS3GATMA1
Tellimiskood2432710
Teise nimegaBSC077N12NS3 G, SP000652750
Tehniliste andmete leht
31 513 Laos
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| Kogus | |
|---|---|
| 1+ | 1,870 € |
| 10+ | 1,540 € |
| 100+ | 1,340 € |
| 500+ | 1,210 € |
| 1000+ | 1,070 € |
Hind:Each (Supplied on Cut Tape)
Minimaalne: 1
Mitmekordne: 1
1,87 € (KM-ta)
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Tooteteave
TootjaINFINEON
Tootja toote nrBSC077N12NS3GATMA1
Tellimiskood2432710
Teise nimegaBSC077N12NS3 G, SP000652750
Tehniliste andmete leht
Channel TypeN Channel
Drain Source Voltage Vds120V
Continuous Drain Current Id98A
Drain Source On State Resistance0.0066ohm
Transistor Case StyleTDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation139W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Toote ülevaade
The BSC077N12NS3 G is an OptiMOS™ N-channel Power MOSFET offers at the same time the lowest ON-state resistances of the industry and the fastest switching behaviour, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS™ technology gives new possibilities for optimized solutions.
- Excellent switching performance
- World's lowest RDS (ON)
- Very low Qg and Qgd
- Excellent gate charge x RDS (ON) product (FOM)
- MSL1 rated 2
- Environmentally friendly
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
- Qualified according to JEDE for target applications
- Halogen-free, Green device
- Ideal for high-frequency switching and synchronous rectification
- Normal level
Rakendused
Power Management, Motor Drive & Control, Computers & Computer Peripherals, Portable Devices, LED Lighting
Hoiatused
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
Channel Type
N Channel
Continuous Drain Current Id
98A
Transistor Case Style
TDSON
Rds(on) Test Voltage
10V
Power Dissipation
139W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
120V
Drain Source On State Resistance
0.0066ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Tehnilised dokumendid (2)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (21-Jan-2025)
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Toote vastavussertifikaat
Kaal (kg):.000156
Toote jälitatavus