Prindi leht
BSC076N06NS3GATMA1
Power MOSFET, N Channel, 60 V, 50 A, 0.0062 ohm, TDSON, Surface Mount
Pilt on illustreeriv. Lugege toote kirjeldust.
TootjaINFINEON
Tootja toote nrBSC076N06NS3GATMA1
Tellimiskood2443422
Teise nimegaBSC076N06NS3 G, SP000453656
Tehniliste andmete leht
48 461 Laos
Vajate rohkem?
Tarneaeg 1–2 tööpäeva
Tellige enne kella 17:00 tavaline saadetis
| Kogus | |
|---|---|
| 1+ | 1,230 € |
| 10+ | 0,857 € |
| 100+ | 0,635 € |
| 500+ | 0,487 € |
| 1000+ | 0,425 € |
| 5000+ | 0,386 € |
Hind:Each (Supplied on Cut Tape)
Minimaalne: 1
Mitmekordne: 1
1,23 € (KM-ta)
Lisage tootenr/ /tootemärkus
Lisatud teie tellimuse kinnitusele, arvele ja väljastusteatele ainult sellel tellimusel.
See arv lisatakse tellimuse kinnitusele, arvele, väljastusteatele, veebipõhisele kinnitusmeilile ja tootesildile.
Tooteteave
TootjaINFINEON
Tootja toote nrBSC076N06NS3GATMA1
Tellimiskood2443422
Teise nimegaBSC076N06NS3 G, SP000453656
Tehniliste andmete leht
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id50A
Drain Source On State Resistance0.0062ohm
Transistor Case StyleTDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation69W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Toote ülevaade
The BSC076N06NS3 G is an OptiMOS™ N-channel Power MOSFET perfect choice for synchronous rectification in switched mode power supplies (SMPS). It can be used for a broad range of industrial applications including solar micro inverter and fast switching DC-to-DC converter.
- Excellent gate charge x RDS (ON) product (FOM)
- Very low ON-resistance RDS (ON)
- Ideal for fast switching applications
- MSL1 rated
- Highest system efficiency
- Less paralleling required
- Increased power density
- Very low voltage overshoot
- Superior thermal resistance
- Normal level
- 100% Avalanche tested
- Qualified according to JEDEC for target applications
- Halogen-free, Green device
Rakendused
Power Management, Motor Drive & Control, Industrial, Consumer Electronics, Portable Devices, Communications & Networking, Computers & Computer Peripherals
Tehnilised andmed
Channel Type
N Channel
Continuous Drain Current Id
50A
Transistor Case Style
TDSON
Rds(on) Test Voltage
10V
Power Dissipation
69W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.0062ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Tehnilised dokumendid (3)
Alternatiivid tootele BSC076N06NS3GATMA1
Leiti 1 toodet
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (21-Jan-2025)
Laadige alla vastavussertifikaat
Toote vastavussertifikaat
Kaal (kg):.0003
Toote jälitatavus