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BSC014N04LSATMA1
Power MOSFET, N Channel, 40 V, 100 A, 1400 µohm, TDSON, Surface Mount
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TootjaINFINEON
Tootja toote nrBSC014N04LSATMA1
Tellimiskood2450402
Teise nimegaBSC014N04LS, SP000871196
Tehniliste andmete leht
11 085 Laos
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Ekspresstarne 1–2 tööpäeva jooksul
Tellige enne kella 17:00
Tasuta standardtarne
tellimustele alates 0,00 €
Täpsed tarneajad arvutatakse kassas
| Kogus | |
|---|---|
| 5+ | 1,770 € |
| 50+ | 1,210 € |
| 250+ | 0,813 € |
| 1000+ | 0,592 € |
| 3000+ | 0,580 € |
Hind:Each (Supplied on Cut Tape)
Minimaalne: 5
Mitmekordne: 5
8,85 € (KM-ta)
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Tooteteave
TootjaINFINEON
Tootja toote nrBSC014N04LSATMA1
Tellimiskood2450402
Teise nimegaBSC014N04LS, SP000871196
Tehniliste andmete leht
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id100A
Drain Source On State Resistance1400µohm
Transistor Case StyleTDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Toote ülevaade
The BSC014N04LS is a N-channel Power MOSFET features not only the industry's lowest RDS (ON) but also a perfect switching behaviour for fast switching applications. 15% lower RDS (ON) and 31% lower figure of merit (RDS (ON) x Qg) compared to alternative devices has been realized by advanced thin wafer technology.
- Optimized for synchronous rectification
- Integrated Schottky-like diode
- 100% Avalanche tested
- Superior thermal resistance
- Qualified according to JEDEC for target applications
- Higher solder joint reliability due to enlarged source interconnection
- Highest system efficiency
- Less paralleling required
- Increased power density
- Very low voltage overshoot
- Halogen-free
Rakendused
Power Management, Motor Drive & Control, Industrial
Hoiatused
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
Channel Type
N Channel
Continuous Drain Current Id
100A
Transistor Case Style
TDSON
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
1400µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Tehnilised dokumendid (3)
Alternatiivid tootele BSC014N04LSATMA1
Leiti 8 toodet
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (21-Jan-2025)
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Toote vastavussertifikaat
Kaal (kg):.0002