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BGA612H6327XTSA1
RF Amplifier IC, 16.3 dB Gain / 2.1 dB Noise, Bandwidth DC to 2.8 GHz, 2.8 V, SOT-343-4
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TootjaINFINEON
Tootja toote nrBGA612H6327XTSA1
Tellimiskood2480588RL
Teise nimegaBGA 612 H6327, SP000753510
Tehniliste andmete leht
Tooteteave
TootjaINFINEON
Tootja toote nrBGA612H6327XTSA1
Tellimiskood2480588RL
Teise nimegaBGA 612 H6327, SP000753510
Tehniliste andmete leht
Frequency Min0Hz
Frequency Max2.8GHz
Gain16.3dB
Noise Figure Typ2.1dB
RF IC Case StyleSOT-343
No. of Pins4Pins
Supply Voltage Min-
Supply Voltage Max-
Operating Temperature Min-65°C
Operating Temperature Max150°C
Product Range-
Automotive Qualification Standard-
Toote ülevaade
The BGA 612 H6327 is a general purpose Silicon Germanium Broadband MMIC Amplifier in a Darlington configuration. It is optimized for a typical supply current of 20mA. The low noise amplifier is as flexible as a discrete transistor and offers numerous integrated features for smaller and thinner mobile device designs. The device perfectly fits to the embedded FM radio active antennas in cellular phones (mobile FM radio).
- Cascadable 50Ω gain block
- Compression point P-1dB = 7dBm at 2.0GHz
- Absolute stable
- 70GHz fT - Silicon Germanium technology
- 1kV HBM ESD protection (pin-to-pin)
Rakendused
RF Communications
Tehnilised andmed
Frequency Min
0Hz
Gain
16.3dB
RF IC Case Style
SOT-343
Supply Voltage Min
-
Operating Temperature Min
-65°C
Product Range
-
Frequency Max
2.8GHz
Noise Figure Typ
2.1dB
No. of Pins
4Pins
Supply Voltage Max
-
Operating Temperature Max
150°C
Automotive Qualification Standard
-
Tehnilised dokumendid (3)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85423390
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
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Kaal (kg):.000048
Toote jälitatavus