Prindi leht
BF998E6327HTSA1
RF FET Transistor, 12 V, 30 mA, 200 mW, TO-252
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TootjaINFINEON
Tootja toote nrBF998E6327HTSA1
Tellimiskood2480770RL
Teise nimegaBF 998 E6327, SP000010978
Tehniliste andmete leht
Tooteteave
TootjaINFINEON
Tootja toote nrBF998E6327HTSA1
Tellimiskood2480770RL
Teise nimegaBF 998 E6327, SP000010978
Tehniliste andmete leht
Drain Source Voltage Vds12V
Continuous Drain Current Id30mA
Power Dissipation200mW
Operating Frequency Min-
Operating Frequency Max-
Transistor Case StyleTO-252
No. of Pins4Pins
Operating Temperature Max150°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
MSL-
SVHCNo SVHC (23-Jan-2024)
Toote ülevaade
The BF 998 E6327 is a silicon N-channel MOSFET Triode for low-noise and gain-controlled input stage up to 1GHz.
- Short-channel transistor with high S/C quality factor
- Qualified according AEC-Q101
Rakendused
Power Management, Audio, Communications & Networking
Märkused
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
Drain Source Voltage Vds
12V
Power Dissipation
200mW
Operating Frequency Max
-
No. of Pins
4Pins
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (23-Jan-2024)
Continuous Drain Current Id
30mA
Operating Frequency Min
-
Transistor Case Style
TO-252
Operating Temperature Max
150°C
Transistor Mounting
Surface Mount
MSL
-
Tehnilised dokumendid (2)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (23-Jan-2024)
Laadige alla vastavussertifikaat
Toote vastavussertifikaat
Kaal (kg):.000635
Toote jälitatavus