Prindi leht
AUIRGP50B60PD1E
IGBT, 75 A, 2.35 V, 390 W, 600 V, TO-247AD, 3 Pins
Pilt on illustreeriv. Lugege toote kirjeldust.
TootjaINFINEON
Tootja toote nrAUIRGP50B60PD1E
Tellimiskood2062047
Teise nimegaSP001511546
Tehniliste andmete leht
Ei toodeta enam
Tooteteave
TootjaINFINEON
Tootja toote nrAUIRGP50B60PD1E
Tellimiskood2062047
Teise nimegaSP001511546
Tehniliste andmete leht
Continuous Collector Current75A
Collector Emitter Saturation Voltage2.35V
Power Dissipation390W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-247AD
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
Alternatiivid tootele AUIRGP50B60PD1E
Leiti 1 toodet
Toote ülevaade
The AUIRGP50B60PD1E is an IGBT with ultrafast soft recovery diode. It features parallel operation for higher current applications, lower conduction losses and switching losses. The WARP2 series is suitable for PFC and ZVS SMPS circuits.
- NPT technology, positive temperature coefficient
- Low collector-to-emitter saturation voltage
- Low parasitic capacitances
- Minimal tail current
- Tighter distribution of parameters
- Up to 150kHz high switching frequency
Rakendused
Automotive, HVAC, Power Management
Tehnilised andmed
Continuous Collector Current
75A
Power Dissipation
390W
Transistor Case Style
TO-247AD
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Saturation Voltage
2.35V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
Tehnilised dokumendid (2)
Seotud tooted
Leiti 3 toodet
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Mexico
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Mexico
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Vajab kinnitamist
Laadige alla vastavussertifikaat
Toote vastavussertifikaat
Kaal (kg):.005