Prindi leht
2N7002DWH6327XTSA1
Dual MOSFET, N Channel, 60 V, 60 V, 300 mA, 300 mA, 1.6 ohm
Pilt on illustreeriv. Lugege toote kirjeldust.
TootjaINFINEON
Tootja toote nr2N7002DWH6327XTSA1
Tellimiskood2443473
Teise nimega2N7002DW H6327, SP000917596
Tehniliste andmete leht
108 430 Laos
Vajate rohkem?
Tarneaeg 1–2 tööpäeva
Tellige enne kella 17:00 tavaline saadetis
| Kogus | |
|---|---|
| 5+ | 0,263 € |
| 50+ | 0,155 € |
| 250+ | 0,0925 € |
| 1000+ | 0,0692 € |
| 7500+ | 0,0487 € |
Hind:Each (Supplied on Cut Tape)
Minimaalne: 5
Mitmekordne: 5
1,32 € (KM-ta)
Lisage tootenr/ /tootemärkus
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Tooteteave
TootjaINFINEON
Tootja toote nr2N7002DWH6327XTSA1
Tellimiskood2443473
Teise nimega2N7002DW H6327, SP000917596
Tehniliste andmete leht
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel300mA
Continuous Drain Current Id P Channel300mA
Drain Source On State Resistance N Channel1.6ohm
Drain Source On State Resistance P Channel1.6ohm
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel500mW
Power Dissipation P Channel500mW
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Toote ülevaade
The 2N7002DW H6327 is a dual N-channel OptiMOS™ Small Signal Transistor designed for DC-to-DC converters, eMobility, on-board charger and telecom applications.
- Enhancement-mode
- Logic level
- Avalanche rated
- Fast switching
- Halogen-free
Rakendused
Industrial, Motor Drive & Control, Consumer Electronics, Communications & Networking, Automotive, Power Management
Hoiatused
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
Channel Type
N Channel
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id P Channel
300mA
Drain Source On State Resistance P Channel
1.6ohm
No. of Pins
6Pins
Power Dissipation P Channel
500mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id N Channel
300mA
Drain Source On State Resistance N Channel
1.6ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
500mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Tehnilised dokumendid (2)
Alternatiivid tootele 2N7002DWH6327XTSA1
Leiti 1 toodet
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (21-Jan-2025)
Laadige alla vastavussertifikaat
Toote vastavussertifikaat
Kaal (kg):.000635
Toote jälitatavus