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DMN3008SFG-7
Power MOSFET, N Channel, 30 V, 62 A, 3900 µohm, PowerDI 3333, Surface Mount
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| Kogus | |
|---|---|
| 1+ | 0,873 € |
| 10+ | 0,593 € |
| 100+ | 0,401 € |
| 500+ | 0,324 € |
| 1000+ | 0,294 € |
| 5000+ | 0,242 € |
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Mitmekordne: 1
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Tooteteave
TootjaDIODES INC.
Tootja toote nrDMN3008SFG-7
Tellimiskood3943570
Tehniliste andmete leht
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id62A
Drain Source On State Resistance3900µohm
Transistor Case StylePowerDI 3333
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.3V
Power Dissipation900mW
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
Toote ülevaade
DMN3008SFG-7 is a N-channel enhancement mode MOSFET in an 8 pin PowerDI3333 package. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications include backlighting, power management functions and DC-DC converters.
- Dain-source voltage is 30V
- Gate-source voltage is ±20V
- Pulsed drain current is 150A
- Total power dissipation is 0.9W(TA = +25°C)
- Operating temperature range from -55 to +150°C
- Static drain-source on-resistance is 5.5mohm(VGS = 4.5V, ID = 13.5A)
- Low RDS(ON) ensures on-state losses are minimized
- Small, form factor thermally efficient package enables higher density end products
- Qualified to AEC-Q101 standards for high reliability
Tehnilised andmed
Channel Type
N Channel
Continuous Drain Current Id
62A
Transistor Case Style
PowerDI 3333
Rds(on) Test Voltage
10V
Power Dissipation
900mW
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
3900µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.3V
No. of Pins
8Pins
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Tehnilised dokumendid (2)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:United States
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:United States
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (27-Jun-2024)
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Toote vastavussertifikaat
Kaal (kg):.000001
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