Prindi leht
S25FL064LABMFM010
Flash Memory, AEC-Q100, Serial NOR, 64 Mbit, 8M x 8bit, SPI, SOIC, 8 Pins
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TootjaINFINEON
Tootja toote nrS25FL064LABMFM010
Tellimiskood2771136
Tootevalik3V Serial NOR Flash Memories
Teise nimegaSP005661065, S25FL064LABMFM010
Tehniliste andmete leht
4 246 Laos
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Ekspresstarne 1–2 tööpäeva jooksul
Tellige enne kella 17:00
Tasuta standardtarne
tellimustele alates 0,00 €
Täpsed tarneajad arvutatakse kassas
| Kogus | |
|---|---|
| 1+ | 1,490 € |
| 10+ | 1,400 € |
| 50+ | 1,330 € |
| 100+ | 1,300 € |
| 250+ | 1,250 € |
| 500+ | 1,220 € |
| 1000+ | 1,190 € |
| 2500+ | 1,170 € |
Hind:Each
Minimaalne: 1
Mitmekordne: 1
1,49 € (KM-ta)
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Tooteteave
TootjaINFINEON
Tootja toote nrS25FL064LABMFM010
Tellimiskood2771136
Tootevalik3V Serial NOR Flash Memories
Teise nimegaSP005661065, S25FL064LABMFM010
Tehniliste andmete leht
Flash Memory TypeSerial NOR
Memory Density64Mbit
Memory Configuration8M x 8bit
InterfacesSPI
IC Case / PackageSOIC
No. of Pins8Pins
Clock Frequency Max108MHz
Access Time-
Supply Voltage Min2.7V
Supply Voltage Max3.6V
Supply Voltage Nom3V
IC MountingSurface Mount
Operating Temperature Min-40°C
Operating Temperature Max125°C
Product Range3V Serial NOR Flash Memories
SVHCNo SVHC (21-Jan-2025)
Toote ülevaade
S25FL064LABMFM010 is a SPI multi-I/O, 3.0V flash memory. It connects to a host system via a serial peripheral interface (SPI). It offers high densities coupled with the flexibility and fast performance required by a variety of mobile or embedded applications. It provides an ideal storage solution for systems with limited space, signal connections, and power. This memory offers flexibility and performance well beyond ordinary serial flash devices. It is ideal for code shadowing to RAM, executing code directly (XIP), and storing re-programmable data.
- 64Mb density, floating gate process technology
- 2.7V to 3.6V supply voltage, 6MBps (50MHz) normal read speed
- 13Mbps (108MHz) fast read speed, 26Mbps (108MHz) dual read speed
- 52Mbps (108MHz) quad read speed, 54Mbps (54MHz) quad read speed (DDR)
- 256B program buffer size, 1024B security region/OTP
- Individual and region protection or advanced sector protection
- Erase suspend/resume, program suspend/resume
- 100,000 minimum program-erase cycles, 20 year minimum data retention
- Automotive temperature range from -40°C to +125°C
- AEC-Q100 grade 1 qualified, 8-lead SOIC package
Tehnilised andmed
Flash Memory Type
Serial NOR
Memory Configuration
8M x 8bit
IC Case / Package
SOIC
Clock Frequency Max
108MHz
Supply Voltage Min
2.7V
Supply Voltage Nom
3V
Operating Temperature Min
-40°C
Product Range
3V Serial NOR Flash Memories
SVHC
No SVHC (21-Jan-2025)
Memory Density
64Mbit
Interfaces
SPI
No. of Pins
8Pins
Access Time
-
Supply Voltage Max
3.6V
IC Mounting
Surface Mount
Operating Temperature Max
125°C
MSL
MSL 3 - 168 hours
Tehnilised dokumendid (1)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Thailand
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Thailand
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85423261
US ECCN:3A991.b.1.a
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (21-Jan-2025)
Laadige alla vastavussertifikaat
Toote vastavussertifikaat
Kaal (kg):.001592
Toote jälitatavus