Prindi leht
Toote ülevaade
The HSMS-2850-TR1G is a 3-pin single surface-mount zero bias Schottky Detector Diode has been designed and optimized for use in small signal (pin <lt/>-20dBm) applications at frequencies below 1.5GHz. They are ideal for RF/ID and RF Tag applications where primary (DC bias) power is not available. The Schottky barrier diode chip consists of a metal-semiconductor barrier formed by deposition of a metal layer on a semiconductor.
- High detection sensitivity
- Low flicker noise
- Low FIT (failure in time) rate
- Better thermal conductivity for higher power dissipation
- 175μA at 2V Maximum reverse leakage current
- 8kΩ Typical video resistance
- 500°C/W Thermal resistance
- 150°C Junction temperature
Rakendused
Signal Processing
Hoiatused
ESD sensitive device, take proper precaution while handling the device.
Tehnilised andmed
Reverse Voltage
2V
Forward Current If Max
1mA
Diode Capacitance
0.3pF
Product Range
HSMS
Forward Current
1mA
Forward Voltage
250mV
Operating Temperature Max
150°C
Tehnilised dokumendid (2)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Vajab kinnitamist
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Kaal (kg):.000018