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ATF-55143-TR1G
RF FET Transistor, 5 V, 100 mA, 270 mW, 450 MHz, 6 GHz, SOT-343
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Tooteteave
TootjaBROADCOM
Tootja toote nrATF-55143-TR1G
Tellimiskood1056825
Tehniliste andmete leht
Drain Source Voltage Vds5V
Continuous Drain Current Id100mA
Power Dissipation270mW
Operating Frequency Min450MHz
Operating Frequency Max6GHz
Transistor Case StyleSOT-343
No. of Pins4Pins
Operating Temperature Max150°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
Toote ülevaade
The ATF-55143-TR1G is a 5V RF FET, low noise enhancement mode pseudomorphic HEMT in a surface technology. The combination of high gain, high linearity and low noise makes ideal for cellular sets. The system works in a frequency range of 450MHz to 6GHz.
- High linearity performance
- Single supply enhancement mode technology
- Very low noise figure
- Excellent uniformity in product specifications
- 400 Micron gate width
Rakendused
Wireless, Consumer Electronics, Portable Devices
Hoiatused
ESD sensitive device, take proper precaution while handling the device.
Tehnilised andmed
Drain Source Voltage Vds
5V
Power Dissipation
270mW
Operating Frequency Max
6GHz
No. of Pins
4Pins
Channel Type
N Channel
Product Range
-
Continuous Drain Current Id
100mA
Operating Frequency Min
450MHz
Transistor Case Style
SOT-343
Operating Temperature Max
150°C
Transistor Mounting
Surface Mount
Tehnilised dokumendid (1)
Seotud tooted
Leiti 2 toodet
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Vajab kinnitamist
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Kaal (kg):.000006