ADPA7009-2ACEZ-R7

ADPA7009-2ACEZ-R7 is a power amplifier. It has gallium arsenide (GaAs), pseudomorphic high-electron-mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC). This 0.5W power amplifier with an integrated temperature-compensated, on-chip power detector that operates between 20GHz and 54GHz. The RF input and outputs are internally matched and DC-blocked for ease of integration into higher-level assemblies. Most of the typically required external passive components for operation are integrated, which facilitates a small, compact printed circuit board (PCB) footprint. Application includes military and space and test instrumentation.

• 24-terminal chip array small outline no lead cavity [LGA-CAV] package
• Temperature range from -40°C to +85°C
• Gain is 17.5dB typical at 20GHz to 35GHz, input return loss is 14dB typical at 20GHz to 35GHz
• Output return loss is 15dB typical at 20GHz to 35GHz, OP1dB is 28 dBm typical at 20GHz to 35GHz
• PSAT is 28.5dBm typical at 20GHz to 35GHz, OIP3 is 34.5dBm typical at 20GHz to 35GHz
• Noise figure is 7.5dB typical at 20GHz to 35GHz
• 5V supply voltage at 850mA
• 50 ohm matched input and output
• Integrated power-supply capacitors and bias inductors
• Integrated AC coupling capacitors

Märkused

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