HMC1126ACEZ

HMC1126ACEZ is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), low noise amplifier that operates from 400MHz to 52GHz. All of the typically required external passive components for operation (ac coupling capacitors and power supply decoupling capacitors) are integrated, which facilitates a small and compact printed circuit board (PCB) footprint. Application includes test instrumentation, military and space.

• Frequency range from 0.4 to 10GHz (TA = 25°C, VDD = 5V, VGG2 = 1V)
• Gain is 12.5dB (typ, TA = 25°C, VDD = 5V, VGG2 = 1V, 400MHz to 10GHz)
• Gain variation over temperature is 0.003dB/°C (typ, TA = 25°C, VDD = 5V, VGG2 = 1V, 400MHz to 10GHz)
• Return loss is 11.5dB (input), 13dB (output) (typ, TA = 25°C, VDD = 5V, VGG2 = 1V, 400MHz to 10GHz)
• 50 ohm matched input and output, no external passive components required
• Output (OP1dB) is 17.5dBm (typ, TA = 25°C, VDD = 5V, VGG2 = 1V, 400MHz to 10GHz)
• Saturated output power is 20dBm (typ, TA = 25°C, VDD = 5V, VGG2 = 1V, 400MHz to 10GHz)
• Noise figure is 4.0dB (typ, TA = 25°C, VDD = 5V, VGG2 = 1V, 400MHz to 10GHz)
• VDD is 5V (supply, typ, TA = 25°C, VDD = 5V, VGG2 = 1V, 400MHz to 10GHz)
• 24-terminal LGA-CAV package, operating temperature range from -40 to +85°C

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