Prindi leht
Tooteteave
TootjaINFINEON
Tootja toote nrIRG4PC50FPBF
Tellimiskood9105115
TootevalikIRG4
Teise nimegaSP001537174
Tehniliste andmete leht
Continuous Collector Current70A
Collector Emitter Saturation Voltage1.79V
Power Dissipation200W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-247AC
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product RangeIRG4
Alternatiivid tootele IRG4PC50FPBF
Leiti 3 toodet
Toote ülevaade
The IRG4PC50FPBF is an Insulated Gate Bipolar Transistor optimized for medium operating frequencies 1 to 5kHz in hard switching, <gt/>20kHz in resonant mode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3.
- Optimized for specific application conditions
- Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs
Rakendused
HVAC, Consumer Electronics, Power Management
Tehnilised andmed
Continuous Collector Current
70A
Power Dissipation
200W
Transistor Case Style
TO-247AC
Operating Temperature Max
150°C
Product Range
IRG4
Collector Emitter Saturation Voltage
1.79V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
Tehnilised dokumendid (1)
Seotud tooted
Leiti 3 toodet
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Mexico
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Mexico
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Laadige alla vastavussertifikaat
Toote vastavussertifikaat
Kaal (kg):.00567
Toote jälitatavus