Prindi leht
Tooteteave
TootjaINFINEON
Tootja toote nrIRG4BC30SPBF
Tellimiskood8650403
TootevalikIRG4
Teise nimegaSP001535662
Tehniliste andmete leht
Continuous Collector Current34A
Collector Emitter Saturation Voltage1.6V
Power Dissipation100W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-220AB
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product RangeIRG4
MSL-
SVHCNo SVHC (17-Dec-2015)
Toote ülevaade
The IRG4BC30SPBF is an Insulated Gate Bipolar Transistor optimized for minimum saturation voltage and low operating frequencies (<1kHz). The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3.
- Optimized for specific application conditions
- Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs
Rakendused
HVAC, Consumer Electronics, Power Management
Tehnilised andmed
Continuous Collector Current
34A
Power Dissipation
100W
Transistor Case Style
TO-220AB
Operating Temperature Max
150°C
Product Range
IRG4
SVHC
No SVHC (17-Dec-2015)
Collector Emitter Saturation Voltage
1.6V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
MSL
-
Tehnilised dokumendid (1)
Seotud tooted
Leiti 3 toodet
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Mexico
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Mexico
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Vajab kinnitamist
Väga ohtlik aine:No SVHC (17-Dec-2015)
Laadige alla vastavussertifikaat
Toote vastavussertifikaat
Kaal (kg):.002042
Toote jälitatavus