Prindi leht
Tooteteave
TootjaINFINEON
Tootja toote nrIGLD60R070D1AUMA1
Tellimiskood2981535
TootevalikCoolGaN
Teise nimegaIGLD60R070D1, SP001705420
Tehniliste andmete leht
Drain Source Voltage Vds600V
Continuous Drain Current Id15A
Drain Source On State Resistance0.055ohm
Typical Gate Charge5.8nC
Transistor Case StylePG-LSON-8-1
Transistor MountingSurface Mount
No. of Pins8Pins
Product RangeCoolGaN
Qualification-
SVHCNo SVHC (27-Jun-2018)
Toote ülevaade
Infineon launches a GaN enhancement mode high electron mobility transistor (e‑mode HEMT) portfolio with industry‑leading field performance, enabling rugged and reliable systems at an attractive overall system cost. CoolGaN™ transistors are built with the most reliable GaN technology and are tailor‑made to deliver the market’s highest efficiency and density levels in switched mode power supplies. The application‑based qualification approach extends beyond that of other GaN products in the market.
Hoiatused
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.055ohm
Transistor Case Style
PG-LSON-8-1
No. of Pins
8Pins
Qualification
-
Continuous Drain Current Id
15A
Typical Gate Charge
5.8nC
Transistor Mounting
Surface Mount
Product Range
CoolGaN
SVHC
No SVHC (27-Jun-2018)
Tehnilised dokumendid (2)
Seotud tooted
Leiti 3 toodet
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Philippines
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Philippines
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (27-Jun-2018)
Laadige alla vastavussertifikaat
Toote vastavussertifikaat
Kaal (kg):.0001