Low

S29GL128P10TFI010 - 

Flash Memory, NOR, 128 Mbit, 16M x 8bit / 8M x 16bit, Parallel, TSOP, 56 Pins

CYPRESS SEMICONDUCTOR S29GL128P10TFI010

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Tootja toote nr:
S29GL128P10TFI010
Tellimiskood:
1791248
Tootevalik
3V Parallel NOR Flash Memories
Tehniliste andmete leht:
(EN)
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Tooteteave

:
-40°C
:
85°C
:
100ns
:
-
:
56Pins
:
16M x 8bit / 8M x 16bit
:
128Mbit
:
3V Parallel NOR Flash Memories
:
TSOP
:
2.7V
:
Parallel
:
Each
:
3.6V
:
MSL 3 - 168 hours
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Toote ülevaade

The S29GL128P10TFI010 is a 128MB page mode Flash Memory featuring 90nm MirrorBit process technology. This device offers a fast page access time of 100ns with a corresponding random access time as fast as 90ns. It features a write buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for todays eMBedded applications that require higher density, better performance and lower power consumption.
  • Highest address sector protected
  • Enhanced Versatile I/O™ control
  • Secured silicon sector region
  • Can be programmed and locked at the factory or by the customer
  • 100000 Erase cycles per sector typical
  • 20 Years data retention typical
  • Suspend and resume commands for program and erase operations
  • Write operation status bits indicate program and erase operation completion
  • Unlock bypass program command - Reduces programming time
  • Support for CFI (Common Flash Interface)
  • Persistent and password methods of advanced sector protection
  • WA#/ACC input - Protects first or last sector regardless of sector protection settings
  • Hardware reset input (RESET#) resets device
  • Ready/busy# output (RY/BY#) detects program or erase cycle completion

Rakendused

Computers & Computer Peripherals, Industrial, Communications & Networking, Consumer Electronics

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