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ON SEMICONDUCTOR  MMUN2216LT1G  Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 100 mA, 4.7 kohm, SOT-23

ON SEMICONDUCTOR MMUN2216LT1G
Technical Data Sheet (97.08KB) EN Vaadake kõiki tehnilisi dokumente

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Toote ülevaade

The MMUN2216LT1G is a NPN Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device.
  • Simplifies circuit design
  • Reduces board space
  • Reduces component count

Tooteteave

Collector Emitter Voltage V(br)ceo:
50V
Continuous Collector Current Ic:
100mA
Base Input Resistor R1:
4.7kohm
Base-Emitter Resistor R2:
-
Resistor Ratio, R1 / R2:
-
RF Transistor Case:
SOT-23
No. of Pins:
3 Pin
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Rakendused

  • Industrial;
  • Power Management

Seadusandlus ja keskkonnateave

Niiskustundlikkuse tase:
MSL 1 - Unlimited
Päritoluriik:
Malaysia

Riik, kus toimus viimane oluline tootmisprotsess

RoHS-ile vastav:
Jah
Tariifi nr:
85412900
Kaal (kg):
.000033

Alternatiivid

Bipolar (BJT) Single Transistor, BRT, NPN, 50 V, 250 mW, 100 mA, 200 hFE

NXP

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