Low

  PSMN6R0-30YLD  MOSFET Transistor, N Channel, 66 A, 30 V, 0.005 ohm, 10 V, 1.83 V

 PSMN6R0-30YLD
Tootja:
Tootja toote nr:
PSMN6R0-30YLD
Tellimiskood:
2449093RL

Pilt on illustreeriv. Lugege toote kirjeldust.

Toote ülevaade

The PSMN6R0-30YLD is a N-channel enhancement-mode logic level gate drive MOSFET optimised for 4.5V gate drive. NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MO...
  • Ultra-low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
  • Superfast switching with soft-recovery (s-factor>1)
  • Low spiking and ringing for low EMI designs
  • Unique SchottkyPlus technology
  • Schottky-like performance with <1µA leakage at 25°C
  • Low parasitic inductance and resistance
  • High reliability clip bonded and solder die attach power SO8 package
  • No glue, no wire bonds, qualified to 175°C
  • Wave solderable, exposed leads for optimal visual solder inspection
  • -55 to 175°C Junction temperature range

Tooteteave

Transistor Polarity:
N Channel
Continuous Drain Current Id:
66A
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.005ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1.83V
Power Dissipation Pd:
47W
Transistor Case Style:
SOT-669
No. of Pins:
4Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

Leia sarnaseid tooteid  rühmitatuna ühise atribuudi järgi

Rakendused

  • Power Management;
  • Communications & Networking;
  • Computers & Computer Peripherals;
  • Motor Drive & Control;
  • Multimedia;
  • Industrial

Seadusandlus ja keskkonnateave

Niiskustundlikkuse tase:
MSL 1 - Unlimited
Päritoluriik:
Philippines

Riik, kus toimus viimane oluline tootmisprotsess

RoHS-ile vastav:
Jah
Tariifi nr:
85412900
Kaal (kg):
.00003