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NXP  PSMN1R0-40YLD  MOSFET Transistor, N Channel, 100 A, 40 V, 0.00093 ohm, 10 V, 1.7 V

NXP PSMN1R0-40YLD

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Toote ülevaade

The PSMN1R0-40YLD is a N-channel enhancement-mode logic level gate drive MOSFET designed using advanced TrenchMOS® Superjunction technology. It is designed and qualified for high performance power switching applications.
  • NextPower-S3 technology delivers superfast switching with soft recovery
  • Low QRR, QG and QGD for high system efficiency and low EMI designs
  • Schottky-plus body-diode, gives soft switching without the associated high IDSS leakage
  • Optimised for 4.5V gate drive utilising NextPower-S3 Superjunction technology
  • High reliability LFPAK package, copper-clip, solder die attach and qualified to 150°C
  • Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints
  • Low parasitic inductance and resistance
  • -55 to 150°C Junction temperature range

Tooteteave

Transistor Polarity:
N Channel
Continuous Drain Current Id:
100A
Drain Source Voltage Vds:
40V
On Resistance Rds(on):
930µohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1.7V
Power Dissipation Pd:
198W
Transistor Case Style:
SOT-669
No. of Pins:
4Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Rakendused

  • Power Management;
  • Motor Drive & Control;
  • Industrial

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Niiskustundlikkuse tase:
MSL 1 - Unlimited
Päritoluriik:
China

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RoHS-ile vastav:
Jah
Tariifi nr:
85412900
Kaal (kg):
.00001