Low

IXYS SEMICONDUCTOR  IXGR16N170AH1  IGBT Single Transistor, Isolated, 16 A, 5 V, 120 W, 1.7 kV, TO-247AD, 3 Pins

IXYS SEMICONDUCTOR IXGR16N170AH1
Technical Data Sheet (119.30KB) EN Vaadake kõiki tehnilisi dokumente

Pilt on illustreeriv. Lugege toote kirjeldust.

Toote ülevaade

The IXGR16N170AH1 is a High Voltage IGBT with sonic diode. It is suitable for DC choppers, capacitor discharge and pulse circuits.
  • Silicon chip on direct-copper bond (DCB) substrate
  • Isolated mounting surface
  • Anti-parallel sonic diode
  • High power density
  • Low gate drive requirement
  • 2500V Electrical isolation

Tooteteave

DC Collector Current:
16A
Collector Emitter Saturation Voltage Vce(on):
5V
Power Dissipation Pd:
120W
Collector Emitter Voltage V(br)ceo:
1.7kV
Transistor Case Style:
TO-247AD
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (15-Jun-2015)

Leia sarnaseid tooteid  rühmitatuna ühise atribuudi järgi

Rakendused

  • Power Management;
  • Motor Drive & Control;
  • Robotics

Seadusandlus ja keskkonnateave

Niiskustundlikkuse tase:
-
Päritoluriik:
Germany

Riik, kus toimus viimane oluline tootmisprotsess

RoHS-ile vastav:
Jah
Tariifi nr:
85412900
Kaal (kg):
.005

Seotud tooted