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IXYS SEMICONDUCTOR  IXFR140N30P  MOSFET Transistor, N Channel, 82 A, 300 V, 26 mohm, 10 V, 5 V

IXYS SEMICONDUCTOR IXFR140N30P
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Toote ülevaade

The IXFR140N30P is a Polar™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features reduced static drain-to-source ON-resistance and high power density.
  • Silicon chip on direct-copper-bond substrate - High power dissipation and isolated mounting surface
  • Unclamped inductive switching (UIS) rating
  • Low package inductance - Easy to drive and to protect
  • Easy to mount
  • Space saving
  • 2500V Electrical isolation voltage

Tooteteave

Transistor Polarity:
N Channel
Continuous Drain Current Id:
82A
Drain Source Voltage Vds:
300V
On Resistance Rds(on):
0.026ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
5V
Power Dissipation Pd:
360W
Transistor Case Style:
ISOPLUS-247
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (15-Jun-2015)

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Rakendused

  • Power Management

Seadusandlus ja keskkonnateave

Niiskustundlikkuse tase:
-
Päritoluriik:
Germany

Riik, kus toimus viimane oluline tootmisprotsess

RoHS-ile vastav:
Jah
Tariifi nr:
85412900
Kaal (kg):
.005

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