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INFINEON  IRG4PC40UD-EPBF  IGBT Single Transistor, 40 A, 2.15 V, 160 W, 600 V, TO-247AC, 3 Pins

INFINEON IRG4PC40UD-EPBF
Technical Data Sheet (250.87KB) EN Vaadake kõiki tehnilisi dokumente

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Toote ülevaade

The IRG4PC40UD-EPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for medium operating frequencies 8 to 40kHz in hard switching, >200kHz in resonant mode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3. The IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. The HEXFRED™ diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing.
  • Optimized for specific application conditions
  • Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs

Tooteteave

DC Collector Current:
40A
Collector Emitter Saturation Voltage Vce(on):
2.15V
Power Dissipation Pd:
160W
Collector Emitter Voltage V(br)ceo:
600V
Transistor Case Style:
TO-247AC
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
IRG4 Series
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Rakendused

  • Alternative Energy;
  • Power Management;
  • Maintenance & Repair

Seadusandlus ja keskkonnateave

Niiskustundlikkuse tase:
-
Päritoluriik:
Mexico

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RoHS-ile vastav:
Jah
Tariifi nr:
85412900
Kaal (kg):
.00567

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